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SAMSUNG 990 EVO PLUS - 1TB PCIE GEN4. X4 / GEN5. X2 NVME 2.0
SAMSUNG 990 EVO PLUS - 1TB PCIE GEN4. X4 / GEN5. X2 NVME 2.0
- Price:
$99.99
- Availability:
- Mfr #: MZ-V9S1T0B/AM
- UNSPSC #: 43201830
- Item #: 012042883
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Miscellaneous
| Enclosure Material | Nickel coating |
| Compliant Standards | IEEE 1667 |
| Package Details | Box |
Software & System Requirements
| Software Included | Samsung Magician Software |
Manufacturer Warranty
| Service & Support | Limited warranty - 5 years / 600 TBW |
Environmental Parameters
| Min Operating Temperature | 32 °F |
| Max Operating Temperature | 158 °F |
| Min Storage Temperature | -40 °F |
| Max Storage Temperature | 185 °F |
| Humidity Range Operating | 5 - 95% (non-condensing) |
| Shock Tolerance (non-operating) | 1500 g @ 0.5 ms |
| Vibration Tolerance (non-operating) | 20 g @ 20-2000 Hz |
General
| Device Type | Solid state drive - internal |
| Capacity | 1 TB |
| Hardware Encryption | Yes |
| Encryption Algorithm | 256-bit AES |
| NAND Flash Memory Type | Triple-level cell (TLC) |
| Form Factor | M.2 2280 |
| Interface | PCIe 5.0 x2 (NVMe) |
| Features | Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T. |
| Width | 0.9 in |
| Depth | 3.2 in |
| Height | 0.1 in |
Expansion & Connectivity
| Compatible Bay | M.2 2280 |
Performance
| Internal Data Rate | 7150 MBps (read) / 6300 MBps (write) |
| Maximum 4KB Random Write | 1350000 IOPS |
| Maximum 4KB Random Read | 850000 IOPS |
Reliability
| MTBF | 1.500.000 hours |
Dimensions & Weight (Shipping)
| Shipping Width | 3.9 in |
| Shipping Depth | 0.9 in |
| Shipping Height | 5.6 in |
Power
| Power Consumption | 4.3 Watt (read) ¦ 4.2 Watt (write) ¦ 60 mW (standby) ¦ 5 mW (sleep) |