Samsung DDR4 is an optimized solution for highly virtualized environments, high-performance computing and networking.
Achieving bandwidth speeds up to 3.2Gbps, Samsung DDR4 delivers higher performance at a higher speed than both DDR2 and DDR3. Compared to DDR3L (low power DDR3), Samsung DDR4 shows an overall improvement in performance in every DIMM and a performance that is more than 40 percent better at 1 DIMM per channel.
A major decrease in voltage and the improved I/O power efficiency of DDR4 synchronous dynamic RAM (SDRAM) translates into significant cost savings. According to Samsung internal testing, DDR4 boasts a continuous working voltage of 1.2 V, a voltage that is 11 percent lower than the 1.35 V consumed by DDR3L. By adopting POD (Pseudo Open Drain) for data transmission, Samsung DDR4's input/output (I/O) power consumption is reduced by 50 percent compared to the previously-used SSTL (Stub Series Terminated Logic) of DDR3L. Overall, Samsung DDR4 shows a Performance/watt level more than 20 percent higher than DDR3L.
- Product Description Samsung - DDR4 - module - 8 GB - DIMM 288-pin - 2133 MHz / PC4-17000 - registered
- Product Type Memory module
- Capacity 8 GB
- Memory Type DDR4 SDRAM - DIMM 288-pin
- Upgrade Type Generic
- Data Integrity Check ECC
- Speed 2133 MHz (PC4-17000)
- Latency Timings CL15 (15-15-15)
- Features Temperature monitoring, single rank, On-Die Termination (ODT), Serial Presence Detect (SPD), sixteen banks, registered
- Voltage 1.2 V
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